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New Product
SUM110N04-2m1P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
350
400
350
2 8 0
300
210
250
200
140
Package Limited
150
100
70
50
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T J - J u nction to Case (°C)
Current Derating*
T J - J u nction to Case (°C)
Power Derating
* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
D u ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69983.
Document Number: 69983
S-80680-Rev. A, 31-Mar-08
www.vishay.com
5
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